The Dallas DS1230Y-120 Integrated Circuit is a high-reliability non-volatile SRAM chip with a 120ns access time. Designed for embedded systems, industrial controls, and legacy instrumentation, it provides secure, battery-backed data retention. This original pulled component is tested and verified for proper operation, offering an affordable solution for system repairs or replacements.
Specifications:
– Manufacturer: Dallas Semiconductor (now part of Maxim Integrated)
– Product Type: 256k Nonvolatile SRAM (NVSRAM)
– Memory Organization: 32,768 words × 8 bits (262,144 bits total)
– Interface Type: Parallel
– Data Bus Width: 8 bits
– Access Time: 120 ns
– Supply Voltage: 4.5V to 5.5V
– Operating Temperature Range: 0°C to +70°C
– Package Type: 28-Pin Dual In-Line Package (DIP)
– Mounting Style: Through-Hole
– Data Retention: Minimum 10 years without external power
– Write Protection: Automatic during power loss
– Write Cycles: Unlimited
– Power Consumption: Low-power CMOS technology
– Backup Power Source: Integrated lithium battery
– Pinout Compatibility: Compatible with 28-pin EEPROMs
Includes:
– (2) Dallas DS1230Y-120 Integrated Circuit Original Pulled
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